Mosfet 23n50e



Número de pieza23N50E
Descripción FMH23N50E
FabricantesFuji Electric
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1. 500V, Power MOSFET - FMH23N50E
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Super FAP-E3 series
N-CHANNEL SILICON POWER MOSFET
Maintains both low power loss and low noise
More controllable switching dv/dt by gate resistance
Narrow band of the gate threshold voltage (3.0±0.5V)
Outline Drawings [mm]
Applications
UPS (Uninterruptible Power Supply)
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)
Drain-Source Voltage
Pulsed Drain Current
Repetitive and Non-Repetitive Maximum Avalanche Current
Repetitive Maximum Avalanche Energy
Peak Diode Recovery -di/dt
VDS
ID
VGS
EAS
dV/dt
Maximum Power Dissipation
Operating and Storage
Tch
Characteristics
500
±92
23
31.5
100
315
-55 to + 150
Drain(D)
Source(S)
V
A
V
mJ
kV/µs
W
°C
VGS = -30V
Note*2
Note*4
Ta=25°C
Electrical Characteristics at Tc=25°C (unless otherwise specified)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Input Capacitance
Reverse Transfer Capacitance
Turn-Off Time
Gate-Source Charge
Avalanche Capability
Reverse Recovery Time
Symbol
VGS (th)
IGSS
gfs
Coss
td(on)
td(off)
Qth
QGS
IAV
trr
Conditions
ID=250µA, VDS=VGS
VDS=400V, VGS=0V
ID=11.5A, VGS=10V
VDS=25V
f=1MHz
VGS=10V
RGS=5.6Ω
ID=23A
L=1.16mH, Tch=25°C
IF=23A, VGS=0V
Tch =25°C
min.
2.5
-
-
-
-
-
-
-
-
-
-
-
-
10
28
330
24
150
11
24
-
0.5
Thermal Characteristics
Thermal resistance
Rth (ch-c)
Test Conditions
Channel to ambient
typ.
Note *2 : Stating Tch=25°C, IAS=10A, L=14.1mH, Vcc=50V, RG=50Ω
EAS limited by maximum channel temperature and avalanche current.
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
Note *4 : IF≤-ID, -di/dt=100A/µs, Vcc≤BVDSS, Tch≤150°C.
Note *5 : IF≤-ID, dv/dt=5.0kV/µs, Vcc≤BVDSS, Tch≤150°C.
max.
3.5
250
0.245
5250
36
19.5
30
139.5
45
1.35
-
0.40
Unit
V
nA
S
ns
A
µs
Unit
°C/W

1 page
FUJI POWER MOSFET
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specifications.
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express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device
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warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which
may arise from the use of the applications described herein.
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products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take
adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products
become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction.
4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has
• Computers
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• Machine tools
• Electrical home appliances
• Industrial robots etc.
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product incorporated in the equipment becomes faulty.
• Transportation equipment (mounted on cars and ships)
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• Space equipment
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No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Device
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PDF Descargar[ Datasheet 23N50E.PDF ]

Part number : 23N50E

Transistor mosfet 23n50e

23N50E - 500V, N-Channel Power MOSFET - Fuji, Circuit, Pinout, Schematic, Equivalent, Replacement, Data, Sheet, Manual and Application notes. You can datasheet PDF files download. In this video I demonstrate how to test a MOSFET transistor with a digital fluke multimeter in the off state and the on state. This transistor came out of a. 23N50E Datasheet: Super FAP-E3 series / N-CHANNEL SILICON POWER MOSFET, Fuji Electric 23N50E PDF Download, 23N50E Buy, Circuits.

Functions : N-CHANNEL SILICON POWER MOSFET

Package information : TO-3P(Q) Type

Manufacturer : Fuji Electric Device Technology

Image :

Features

23n50e

1. Maintains both low power loss and low noise
2. Lower RDS(on) characteristic
3. More controllable switching dv/dt by gate resistance
4. Smaller VGSringing waveform during switching
5. Narrow band of the gate threshold voltage (3.0±0.5V)
6. High avalanche durability

Data Sheet Mosfet 23n50e

Applications

23n50e Mosfet Pinout

1. Switching regulators
2. UPS (Uninterruptible Power Supply)
3. DC-DC converters

Pinout :

Other data sheets within the file : FMH23N50E

23N50E Datasheet PDF Download

Mosfet 23n50e

23n50e Mosfet Equivalent

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